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Product Detailed Parameters
- Description：MOSFET 2N-CH 1000V 65A SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C：65A
- Rds On (Max) @ Id, Vgs：156mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：562nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：15200pF @ 25V
- Power - Max：1250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Grade：-
- Qualification：-
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FAQ
Is the APTM100A13DG a standard discrete component?
No, it is a specialized power module integrating MOSFET and Fast Recovery Epitaxial Diode (FRED) technologies.
What specific package type does this module utilize?
The component utilizes the SP3 package configuration for its internal structure.
