APTM100H45STG

Overview

The APTM100H45STG is a high-voltage N-channel MOSFET module from Microchip Technology, utilizing Silicon technology and the POWER MOS 7 series architecture. It features an SP-4 package with screw mount installation style. Key electrical parameters include a drain-source breakdown voltage of 1 kV, continuous drain current of 13 A to 18 A, and typical on-state resistance of 450 mΩ to 0.54 Ω. The module supports gate-source voltages of ±30 V with a threshold voltage of 3 V. Power dissipation reaches 357 W to 5 kW depending on configuration. Operating temperature range spans -40°C to +150°C. Switching characteristics include rise time of 14 ns, fall time of 55 ns, turn-on delay of 18 ns, and turn-off delay of 140 ns.

Feature Summary

• Integrates full bridge topology with series and parallel diodes for comprehensive power switching solutions
• Incorporates NTC thermistor for precise thermal monitoring and protection within the module
• Utilizes FASTON connectors and screw mounting for secure electrical and mechanical integration

Applications

• High-voltage power switching circuits requiring robust N-channel MOSFET arrays
• Industrial motor drive systems utilizing H-bridge or full-bridge configurations
• Power conversion modules needing integrated thermal sensing via NTC thermistor

Procurement Notes

Verify the specific datasheet version for the APTM100H45STG to confirm exact current ratings (13A vs 18A) and resistance values, as sources vary. Ensure the required SP-4 package dimensions match your chassis design. Confirm that the screw mount and FASTON connector interfaces are compatible with your assembly tools and wiring harnesses before finalizing procurement.

Selection Notes

Select this module when a complete H-bridge or full-bridge solution with integrated diodes and thermal sensing is required. The 1 kV rating suits medium-to-high voltage applications. Consider the 450 mΩ to 0.54 Ω Rds(on) range for efficiency calculations. The SP-4 package size and screw-mount style dictate the physical layout constraints compared to lower-profile alternatives.

Part Context

This component belongs to Microchip's POWER MOS 7 discrete and power modules family. It represents a specialized hybrid module combining MOSFETs and diodes in a single SP-4 package. This integration simplifies circuit design by reducing component count and parasitic inductance compared to discrete assemblies, targeting industrial and automotive power electronics markets.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing driver circuits due to potential variations in gate charge and switching speeds among alternative MOSFET modules.