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The APTM10DUM05TG is a dual common source MOSFET power module manufactured by Microsemi Corporation. It utilizes Power MOS V technology to deliver low on-resistance and high ruggedness. The device features a 100V drain-source breakdown voltage and supports continuous drain currents up to 278A at 25°C case temperature. With a maximum power dissipation of 780W, it incorporates internal thermistors for temperature monitoring and Kelvin sources for precise gate drive control.
Verify the specific revision level against current Microsemi documentation before finalizing designs. Confirm thermal interface requirements match the specified mounting torque. Ensure electrostatic discharge handling procedures are strictly followed during assembly. Check for updated application notes regarding the internal thermistor circuitry.
Select this component for applications requiring high-frequency operation and robust avalanche energy ratings. The SP4 package provides low junction-to-case thermal resistance suitable for high-power density designs. Evaluate the need for integrated temperature sensing versus external monitoring solutions based on system complexity.
This module belongs to the APTM series of dual common source MOSFET power modules from Microsemi. It is designed for high-performance power conversion systems where low switching losses and high reliability are critical. The SP4 package format facilitates efficient thermal management and PCB integration.
Consult official cross-reference tools for parametrically similar parts. Verify that any substitute matches the SP4 package outline and pinout configuration. Ensure replacement devices meet the same isolation voltage and thermal resistance specifications.