APTM120A20DG

$276.29

Description：MOSFET 2N-CH 1200V 50A SP6
Series：-

SKU:e2a3d0721680 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 50A SP6
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：50A
Rds On (Max) @ Id, Vgs：240mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：600nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：15200pF @ 25V
Power - Max：1250W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6
Grade：-
Qualification：-

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APTM120A20DG

Overview

The APTM120A20DG is a Power MOS 7 MOSFET module featuring an integrated series diode. It provides a drain-source breakdown voltage of 1200 V and a continuous drain current of 50 A at 25°C case temperature. The device exhibits a maximum on-resistance of 240 mΩ and supports a maximum power dissipation of 1250 W. It utilizes an SP6 isolated package with M5 power connectors, offering a junction-to-case thermal resistance of 0.1 °C/W for the transistor and 0.46 °C/W for the diode.

Feature Summary

Power MOS 7 technology providing low on-resistance and fast intrinsic reverse diode
Kelvin source connection for simplified gate drive
Very low stray inductance design with symmetrical layout
Rated for repetitive avalanche energy

Applications

Zero Current Switching resonant mode converters
High frequency operation circuits
Direct heatsink mounting applications requiring isolation

Procurement Notes

Verify the specific ordering suffix DG against official Microchip documentation to confirm package and pinout configuration. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure proper electrostatic discharge handling procedures are followed during installation due to component sensitivity.

Selection Notes

Select this module for high-frequency resonant applications requiring low switching losses and rugged avalanche performance. Evaluate the thermal impedance curves against your specific duty cycle and pulse duration requirements. Verify that the 1200 V rating accommodates system voltage transients and that the SP6 package fits the mechanical constraints.

Part Context

This component belongs to the Power MOS 7 family of discrete semiconductor modules manufactured by Microchip Technology. It integrates a high-voltage N-channel MOSFET with a complementary series diode into a single isolated power module designed for robust industrial and power conversion environments.

Replacement Considerations

Consult official Microchip substitution guides or datasheets for verified equivalent part numbers. Do not assume cross-compatibility based solely on voltage and current ratings without verifying package dimensions and electrical characteristics.

FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for 30 mJ of repetitive avalanche energy.

How does the Kelvin source improve drive capability?

The Kelvin source provides a dedicated low-inductance path for the gate drive return, minimizing noise coupling and ensuring accurate threshold control.