APTM120UM70DAG

$264.04

Description：MOSFET N-CH 1200V 171A SP6
Series：-
Mfr：Microchip Technology
Package：Bulk

SKU:2c1c30fb3bec Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APTM120UM70DAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 171A SP6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM120UM70DAG

Description：MOSFET N-CH 1200V 171A SP6
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：171A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 85.5A, 10V
Vgs(th) (Max) @ Id：5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs：1650 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：43500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5000W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP6
Package / Case：SP6

Single FETs, MOSFETs datasheet and documents for APTM120UM70DAG

APTM120UM70DAG

Single FETs, MOSFETs Overview

The APTM120UM70DAG is a Power MOS 7® single switch with series diodes module. It features a 1200 V drain-source breakdown voltage and an 80 mΩ maximum on-resistance at Tc = 25°C. The continuous drain current is rated at 171 A at Tc = 25°C, with a pulsed current capability of 684 A. Maximum power dissipation reaches 5000 W at Tc = 25°C. The integrated series diode supports a 1200 V repetitive reverse voltage and a 240 A forward current at Tc = 70°C. The device utilizes an AlN substrate for thermal performance and includes Kelvin source connections.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology providing low on-resistance and low gate charge
Kelvin source configuration for simplified driver circuitry
AlN substrate designed to improve thermal management
Avalanche energy rated for enhanced ruggedness

Single FETs, MOSFETs Applications

Zero Current Switching resonant mode converters
High frequency power conversion systems
Direct heatsink mounting isolated applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev 2) against your design requirements. Confirm that the SP6 package dimensions and M5 terminal torque specifications align with your mechanical assembly constraints. Ensure the isolation voltage rating meets system safety standards. Review the life support application disclaimer before deployment in critical infrastructure.

Single FETs, MOSFETs Selection Notes

Select this component when high-frequency operation and low switching losses are required. The integrated series diode simplifies half-bridge designs by eliminating external freewheeling components. Consider the thermal resistance characteristics and the necessity for direct heatsink mounting. Evaluate the avalanche energy rating if the application involves inductive load switching or fault conditions.

Single FETs, MOSFETs Part Context

This module belongs to the Microsemi discrete semiconductor modules category, specifically utilizing silicon MOSFET technology. It is part of the Power MOS 7 family, which emphasizes low input capacitance and Miller capacitance. The SP6 package provides a standardized form factor for industrial power electronics integration.