APTM20AM05FTG

Overview

The APTM20AM05FTG is a dual N-channel MOSFET array manufactured by Microsemi Corporation. It features a half-bridge configuration with a drain-to-source voltage rating of 200V and a continuous drain current capacity of 333A. The device supports an avalanche energy rating of 1300 mJ and has an isolated case connection. Designed for chassis mounting in the SP4 package, it operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• Dual N-channel half-bridge configuration for high-power switching applications
• High continuous drain current capability of 333A at 25°C
• Robust avalanche energy rating of 1300 mJ for rugged operation
• Isolated case connection suitable for chassis mounting

Applications

• High-power industrial motor drives
• DC-DC converter circuits
• Inverter systems requiring robust switching elements

Procurement Notes

Verify the specific manufacturer designation, as historical records indicate transitions between Microsemi and Microchip Technology for this component series. Confirm that the ordering suffix matches the required electrical characteristics, particularly the on-resistance and current ratings, as variations exist within the APTM20AM family. Ensure compatibility with SP4 chassis mount requirements and check for RoHS compliance status relevant to your manufacturing standards.

Selection Notes

Select this component when a 200V half-bridge topology is required with high current handling capabilities up to 333A. The SP4 package facilitates direct chassis mounting, simplifying thermal management in power electronics designs. Consider the 1300 mJ avalanche rating for applications involving inductive load switching where transient energy absorption is critical. Ensure gate drive voltages align with standard logic or dedicated driver outputs compatible with the device's threshold specifications.

Part Context

This part belongs to the APTM20AM series of Power MOSFET arrays from Microsemi (now Microchip). These modules are engineered for demanding power conversion tasks, offering integrated half-bridge structures in compact, thermally efficient packages. The series provides alternatives to discrete transistor solutions by combining matched devices for improved performance and reduced board space.

Replacement Considerations

The APTM20AM10FTG is a documented substitute within the same series, featuring similar packaging but different current and resistance parameters. Verify pinout compatibility and thermal interface requirements before substitution.