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The APTM50AM24SG is a silicon-based N-channel MOSFET module manufactured by Microchip Technology. It features a dual configuration arranged as a half-bridge within an SP6 base-mounted package. The device supports a drain-source voltage of 500V and delivers a continuous drain current of 150A at 25°C. Maximum power dissipation is rated at 1250W, with an operating junction temperature range from -40°C to 150°C. Key electrical parameters include a maximum on-resistance of 28 milliohms at 75A and 10V gate drive, a gate charge of 434nC at 10V, and an input capacitance of 19600pF at 25V.
Verify the specific suffix against official Microchip documentation to confirm exact pinout and thermal interface specifications. Confirm RoHS compliance status through current datasheets or product change notifications. Ensure the ordering quantity matches the manufacturer's standard packaging requirements. Cross-reference the component marking with the latest assembly site notifications to guarantee authenticity and traceability.
Select this module when a compact half-bridge solution is required for 500V applications. The SP6 package facilitates direct mounting to heatsinks for effective thermal management. Evaluate the 28 milliohm on-resistance against system conduction loss requirements. Consider the 150A current rating relative to peak load demands and ambient cooling conditions.
This component belongs to the APTM50 series of discrete semiconductor modules produced by Microchip Technology. The series utilizes silicon technology for high-power switching operations. The SP6 package format is designed for base-mount installation, distinguishing it from surface-mount alternatives. This family targets industrial power electronics requiring reliable high-current handling.
The datasheet specifies a maximum gate-source voltage of ±30V.
Yes, the SP6 package is designed for base mounting, typically utilizing screws for mechanical fixation and thermal conduction.
The maximum gate charge is 434nC when measured at a gate-source voltage of 10V.