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The APTMC120HR11CT3G is a discrete semiconductor module manufactured by Microchip Technology, formerly Microsemi. It utilizes silicon technology and features a dual configuration within an SP3-32 package. The device is rated for a maximum collector-emitter voltage of 1.2 kV and operates with a continuous collector current of 75 A at 25°C. Key electrical parameters include a saturation voltage of 2.05 V and a power dissipation capacity of 250 W. The module supports screw mounting and functions within a temperature range of -40°C to +100°C.
Verify the specific suffix CT3G against official Microchip documentation to confirm packaging and revision details. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notifications. Check for end-of-life notices or discontinuance notifications prior to final design approval. Ensure the supplier provides valid traceability documents for the discrete semiconductor module.
Select this module for applications requiring a dual IGBT configuration with high voltage blocking capability. The 1.2 kV rating makes it suitable for medium-voltage industrial systems. Evaluate the thermal management requirements based on the 250 W power dissipation limit. Compare the 75 A continuous current rating against peak load demands to ensure adequate headroom. Verify that the SP3-32 package dimensions fit the intended mechanical layout.
This component belongs to the APTMC series of silicon IGBT modules from Microchip Technology. The series includes various configurations such as boost choppers and phase legs designed for high-reliability industrial applications. These modules are engineered to provide robust performance in demanding power electronics environments, leveraging established silicon technology for cost-effective solutions.
Publicly confirmed substitute part numbers for APTMC120HR11CT3G were not identified in the provided source material. Consult Microchip Technology directly for qualified alternatives or cross-reference options.