APTMC170AM60CT1AG

Overview

The APTMC170AM60CT1AG is a Silicon Carbide (SiC) MOSFET module manufactured by Microchip Technology. It features a 2 N-channel configuration arranged in a phase leg topology. The device supports a drain-to-source voltage of 1700V and has a maximum power dissipation rating of 350W. Key electrical parameters include a gate charge of 190nC at 20V and a maximum input capacitance of 3080pF at 1000V.

Feature Summary

• Utilizes Silicon Carbide technology for high-performance switching capabilities
• Configured as a dual N-channel phase leg arrangement
• Rated for high-voltage operation up to 1700V

Applications

• High-power industrial motor drives
• Uninterruptible power supply systems
• Industrial inverter applications

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm the specific datasheet revision and package variant prior to integration. Ensure compliance with all relevant safety standards and handling procedures for high-voltage semiconductor modules during installation and testing phases.

Selection Notes

Select this component for designs requiring robust high-voltage switching with low conduction losses. The SiC material offers superior thermal performance compared to silicon alternatives. Evaluate the 1700V rating against system peak voltages and ensure the 350W dissipation capability aligns with the thermal management strategy of the target application.

Part Context

This discrete semiconductor module belongs to Microchip's portfolio of power electronics components. It is designed for demanding environments where efficiency and reliability are critical. The phase leg configuration simplifies circuit design for bridge-based topologies commonly found in modern power conversion systems.

Replacement Considerations

Public confirmed substitute part numbers: None identified.