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The ARF1501 is an N-channel RF MOSFET designed for high-power applications. It operates at a test voltage of 250 V and features a rated voltage of 1000 V. The device supports a frequency of 27.12 MHz with a gain of 17 dB. It delivers an output power of 750 W and has a continuous drain current rating of 30 A. The component utilizes a T-1 package and is constructed using silicon technology.
Verify the specific pinout and thermal requirements against the official Microchip datasheet before integration. Confirm that the T-1 package mounting style aligns with your heatsink design. Ensure supply chain sources provide genuine components with traceable documentation to maintain reliability in high-voltage RF environments.
Select this component when designing circuits requiring high voltage isolation and significant power output at HF frequencies. Consider the 30 A current rating and 1000 V breakdown for robustness. Evaluate thermal management needs due to the 750 W power dissipation capabilities inherent in the T-1 package structure.
This part belongs to the ARF series of RF MOSFET transistors from Microchip Technology. These devices are engineered for demanding radio frequency applications where high voltage and power density are critical. The T-1 package provides a standardized form factor for screw-mount installation in industrial and commercial RF hardware.
The ARF1501 has a rated voltage of 1000 V, although it is tested at 250 V.
The ARF1501 utilizes an N-channel configuration.
The device provides a gain of 17 dB at its specified operating frequency of 27.12 MHz.