ARF1511

Overview

The ARF1511 is a four RF power transistor arranged in an H-Bridge configuration, designed for off-line 300V operation. It delivers 750 Watts of output power at frequencies up to 40 MHz with a gain of 17 dB in Class D mode. The device features a 500 V drain-source breakdown voltage and handles a continuous drain current of 20 A. It operates within a junction temperature range of -55°C to +175°C and utilizes a T-1 package.

Feature Summary

• Four RF power transistors integrated into a single H-Bridge module
• High performance power RF package with low thermal resistance
• Nitride passivated die for improved reliability
• Very high breakdown voltage for enhanced ruggedness

Applications

• High power scientific RF power generators
• Medical RF power amplifiers
• Industrial RF power generator applications

Procurement Notes

Verify the specific revision status of the datasheet before procurement, as specifications may be subject to change without notice. Confirm that handling procedures account for the beryllium oxide ceramic portion of the device, which is toxic if damaged. Ensure mounting instructions regarding clamping force and thermal joint compound are strictly followed to maintain performance and safety standards during installation.

Selection Notes

Select this component for applications requiring high power density and frequency stability up to 40 MHz. The integrated H-Bridge design simplifies circuit topology compared to discrete solutions. Consider the thermal management requirements carefully, as the rated power dissipation depends on maintaining a case temperature of 25°C. Evaluate the need for high efficiency thermal joint compounds and planar heat sink surfaces to minimize thermal impedance.

Part Context

Manufactured by Microchip Technology (formerly Microsemi), the ARF1511 belongs to the family of RF MOSFET transistors. It is specifically engineered for high-power radio frequency applications where compact integration and robust electrical characteristics are critical. The device replaces multiple discrete transistors with a unified module solution.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.