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Product Detailed Parameters
- Description：RF MOSFET 50V TO247AD
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Frequency：13.56MHz
- Gain：21dB
- Voltage - Test：50 V
- Current Rating (Amps)：11A
- Noise Figure：-
- Current - Test：200 mA
- Power - Output：125W
- Voltage - Rated：150 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Configuration：N-Channel
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Overview
The ARF440 is an N-channel enhancement mode RF power MOSFET designed for narrow-band push-pull applications. It operates at 13.56 MHz with a drain-source voltage of 50V and delivers 125W output power. The device features a typical gain of 21dB and efficiency of 63%. Maximum ratings include a breakdown voltage of 150V, continuous drain current of 11A, and total power dissipation of 167W at 25°C case temperature. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.75°C/W.
Feature Summary
- Designed as part of a symmetric pair with the ARF441 for ease of use in push-pull configurations
- Features very high breakdown voltage to improve operational ruggedness
- Utilizes nitride passivated die technology for enhanced reliability
- Offers low thermal resistance for efficient heat dissipation
Applications
- Narrow-band commercial RF power amplifiers
- Medical RF power amplifier systems
- Industrial RF power amplifier circuits
Procurement Notes
Verify the specific manufacturer origin, as the datasheet references Advanced Power Technology (APT) while the prompt specifies Microsemi Corporation. Confirm RoHS compliance status and ensure proper electrostatic discharge handling procedures are followed during procurement and assembly due to device sensitivity.
Selection Notes
Select the ARF440 when designing narrow-band push-pull amplifiers requiring 125W output at 13.56 MHz. It must be paired with its mirror-image counterpart, the ARF441, to utilize the symmetric pin-out configuration. Ensure the application supports the specified 50V drain-source voltage and requires the ruggedness provided by the 150V breakdown rating.
Part Context
The ARF440 belongs to a family of RF power MOSFETs intended for ISM band applications. It is electrically matched with the ARF441 P-channel device to form a complete push-pull stage. Both devices share identical electrical specifications but feature inverted pin-outs to simplify circuit layout and transformer coupling in balanced amplifier designs.
Replacement Considerations
The ARF441 serves as the complementary device for push-pull operation. No direct single-device replacements are documented in the provided source material.
