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The ARF444 is an N-channel enhancement mode RF power MOSFET manufactured by Microsemi Corporation. It is housed in a TO-247AD package and designed for high-voltage radio frequency applications. The device features a maximum drain-source breakdown voltage of 900V, making it suitable for demanding power conversion environments requiring robust voltage handling capabilities.
Verify the exact datasheet revision and specific electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247AD package dimensions match the target PCB layout requirements. Ensure thermal management solutions are adequate for the intended operating conditions.
Select this component when a 900V N-channel RF MOSFET is required in a TO-247AD form factor. Evaluate thermal resistance and gate drive requirements against system specifications. Compare performance metrics with alternative devices if higher current or lower on-resistance is needed.
The ARF444 belongs to Microsemi's portfolio of RF power transistors, now part of Microchip Technology Inc. following acquisition. These components target aerospace, defense, and communications sectors, emphasizing reliability and high-performance analog and mixed-signal semiconductor solutions for critical applications.
Consult Microchip's official replacement guide for comparable parts with modified specifications. Verify pinout compatibility and thermal interface requirements when substituting.