ARF447G

Overview

The ARF447G is an N-Channel Enhancement Mode RF Power MOSFET manufactured by Microsemi Corporation. It is specified for operation at 250 Volts and 40.68 MHz, delivering 140 Watts of output power with 15dB gain in Class C configuration and 75% efficiency. The device features a common source RF package designed for ruggedness, incorporating nitride passivated die technology to enhance reliability under high voltage breakdown conditions.

Feature Summary

• Symmetric pair design compatible with the ARF446 for push-pull configurations
• Nitride passivated die construction for improved operational reliability
• High voltage breakdown capability ensuring enhanced circuit ruggedness

Applications

• Scientific RF power amplifier applications
• Commercial RF power amplifier systems
• Medical RF power amplifier equipment
• Industrial RF power amplifier setups

Procurement Notes

Verify the specific manufacturer designation on the component marking, as this part number may appear under Advanced Power Technology or Microsemi branding depending on the production era. Confirm RoHS compliance status through official datasheets, as legacy versions may differ. Ensure the ordering suffix matches the required package variant and that the device meets the specific voltage and frequency requirements for your narrowband application.

Selection Notes

Select the ARF447G when designing push-pull amplifiers requiring symmetric N-channel performance paired with the ARF446 P-channel counterpart. This component is suitable for applications operating up to 65 MHz where high voltage handling and thermal stability are critical. Consider its common source package for ease of integration into standard RF power amplifier topologies requiring robust breakdown characteristics.

Part Context

This component belongs to a family of RF power transistors designed for high-efficiency amplification in ISM and medical bands. It serves as the N-channel complement to the ARF446, enabling balanced bridge configurations. The series is characterized by high voltage tolerance and low thermal resistance, targeting demanding industrial and scientific radio frequency environments.

Replacement Considerations

The ARF446 is the designated symmetric P-channel partner for push-pull designs. Direct replacements should be verified against the 250V/40.68MHz specification sheet. Cross-reference with other N-channel enhancement mode RF MOSFETs only if pinout and electrical parameters match exactly.