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The ARF448A is an N-channel enhancement mode RF power MOSFET designed for push-pull amplifier applications up to 65 MHz. It features a drain-source breakdown voltage of 450 V and a continuous drain current of 15 A at 25°C case temperature. The device delivers 140 W output power with 15 dB gain and 75% efficiency at 40.68 MHz in Class C operation. It utilizes a TO-247 package with a junction-to-case thermal resistance of 0.55 °C/W and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix (e.g., 'G' for tape and reel) against your packaging requirements, as datasheets may list variants like ARF448BG. Confirm that the manufacturer designation aligns with current corporate structures, as Advanced Power Technology assets are often associated with Microchip or similar entities. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity.
Select the ARF448A for high-voltage RF applications requiring 450 V breakdown and 140 W output power near 40 MHz. Consider the TO-247 package for through-hole mounting and adequate thermal management. Evaluate the symmetric ARF448B counterpart if a matched pair for push-pull topology is required. Verify impedance matching networks against the provided typical input/output impedance data for optimal performance.
The ARF448A belongs to a series of common source RF power transistors intended for high-reliability environments where failure is not tolerated. It is part of a symmetric pair family, often paired with the ARF448B, designed to simplify push-pull circuit layouts. These devices utilize industry-standard packages and meet rigorous electrical specifications for commercial and industrial RF systems.
The ARF446 and ARF447 are noted as symmetric pairs meeting the same electrical specifications but with mirror-image pinouts. Verify pin compatibility before substitution. No other direct substitutes are confirmed in the provided documentation.