SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ARF461BG is an N-channel RF MOSFET manufactured by Microchip Technology. It features a silicon VDMOS construction with a drain-source breakdown voltage of 1000 V and a continuous drain current of 6.5 A. Designed for high-frequency operation, it supports frequencies up to 65 MHz with a gain of 13 dB and delivers 150 W of output power. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-247-3 through-hole package.
Verify the specific suffix against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid traceability for semiconductor components. Confirm RoHS compliance status directly from the manufacturer's datasheet before integration into regulated assemblies.
Select this component when designs require high voltage handling combined with significant RF power output. The 1000 V rating distinguishes it from lower-voltage family members like the ARF460BG. Evaluate thermal management requirements carefully due to the 150 W output capability and ensure the PCB layout supports the TO-247-3 package mounting style.
This part belongs to Microchip’s RF MOSFET transistor series, specifically utilizing Vertical DMOS technology. It serves as a high-power switching element distinct from bipolar transistors or logic-level MOSFETs. The ARF461BG represents the high-voltage variant within its product line, tailored for demanding RF environments requiring stable gain and efficiency.
The ARF460BG offers similar RF characteristics but with a lower 500 V rating. Verify that the system voltage does not exceed 500 V if considering this alternative. No direct pin-compatible substitutes with identical 1000 V ratings are publicly confirmed.