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The ARF461CG is an N-channel enhancement mode RF power MOSFET designed for push-pull applications up to 65 MHz. It features a drain-source voltage of 1000 V and continuous drain current of 6.5 A at 25°C case temperature. The device delivers 150 W output power with 13 dB gain in Class AB operation at 40.68 MHz. Total power dissipation is rated at 250 W, with a junction-to-case thermal resistance of 0.50 °C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix against official Microchip documentation to confirm pinout orientation relative to its symmetric pair counterpart. Ensure handling procedures account for electrostatic discharge sensitivity. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve over time.
Select this component for high-voltage RF applications requiring robust push-pull topologies. The 1000 V rating supports high supply voltages while maintaining low on-state resistance. Evaluate thermal management requirements based on the 0.50 °C/W junction-to-case resistance for efficient heat dissipation in enclosed environments.
This device belongs to a family of symmetric RF power transistors intended for paired operation. The ARF461CG serves as one half of a matched pair, sharing identical electrical specifications with its mirror-image counterpart to facilitate balanced circuit layouts and simplified impedance matching networks.
Consult official substitution lists for verified equivalents. Generic replacements may not match the symmetric pinout or ruggedness characteristics required for push-pull configurations.