ARF466AG

Overview

The ARF466AG is an RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon technology and features a TO-264 package style for through-hole mounting. The device is rated for a drain-source voltage of 1000 V, with a power output capability of 300 W. It operates at a frequency of 45 MHz.

Feature Summary

• Designed as an RF MOSFET (VDMOS) transistor for high-frequency applications
• Capable of handling high voltage ratings up to 1000 V
• Supports significant power output levels suitable for RF amplification

Applications

• RF power amplification circuits
• High-voltage radio frequency systems
• Industrial RF equipment

Procurement Notes

Verify the specific package variant against project requirements, as datasheets may list TO-264 or TO-247-3. Confirm RoHS compliance status directly with the manufacturer, as some listings indicate non-compliance. Ensure the operating frequency aligns with the 45 MHz specification. Check for recent Product Change Notifications regarding assembly or wafer fab site changes before finalizing procurement.

Selection Notes

Select this component when a high-voltage silicon RF MOSFET is required for through-hole assembly. The 1000 V rating distinguishes it from lower-voltage alternatives. Consider the thermal management capabilities associated with the specified package type. Verify that the 300 W power output meets the system's gain and efficiency targets without exceeding safe operating area limits.

Part Context

This part belongs to the RF MOSFET Transistors category under Microchip Technology's discrete semiconductor portfolio. It is classified specifically as an RF Power MOSFET. The product line focuses on vertical DMOS structures designed for robust performance in demanding radio frequency environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.