ARF468AG

Overview

The ARF468AG is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon VDMOS technology and operates within a frequency range of 45 MHz to 270 W output power at 500 V drain-source voltage. The device features a TO-264 package with through-hole mounting, supporting a maximum junction temperature of +150°C and a minimum operating temperature of -55°C.

Feature Summary

• High-voltage silicon VDMOS construction for robust RF performance
• Designed for high-power applications up to 270W output
• Wide operational frequency bandwidth extending to 270MHz

Applications

• RF power amplification stages
• Broadband transmitter systems
• Industrial RF heating equipment

Procurement Notes

Verify the specific datasheet revision and product change notifications prior to procurement. Confirm that the TO-264 package dimensions match your PCB footprint requirements. Ensure thermal management solutions accommodate the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring high breakdown voltage combined with significant RF output power. Compare gain characteristics and thermal resistance against alternative packages if space constraints exist. Validate compatibility with driving circuitry for the required gate threshold specifications.

Part Context

This part belongs to Microchip's RF MOSFET transistor family, specifically engineered for high-frequency power applications. It shares common design principles with other VDMOS devices in the series but offers distinct power and frequency capabilities tailored for specialized RF environments.

Replacement Considerations

Consult official substitution lists for equivalent RF MOSFETs with matching voltage and power ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.