ARF475FL

Overview

The ARF475FL is a matched pair of RF power transistors in a common source configuration within a T3A package. Designed for high-voltage push-pull or parallel operation, it supports narrow band ISM and MRI power amplifiers up to 128 MHz. Key specifications include a 500 V drain-source voltage, 900 W peak output power, and 15 dB gain at Class AB bias. The device features a continuous drain current of 10 A, 910 W total power dissipation per side, and operates from -55 °C to +175 °C.

Feature Summary

• Matched pair configuration with specified forward transconductance match ratio for balanced performance
• High-performance push-pull RF package designed for superior ruggedness and large safe operating area
• Low thermal resistance junction-to-case and junction-to-sink characteristics
• Electrical ruggedness capable of maintaining output power under 5:1 VSWR conditions

Applications

• Narrow band ISM power amplifiers
• MRI power amplifiers
• High-voltage push-pull RF circuits
• Parallel operation RF configurations

Procurement Notes

Verify the specific datasheet revision DS00004435A against your design requirements. Confirm that handling procedures account for the beryllium oxide ceramic portion of the T3A package to avoid toxicity risks. Ensure mounting torque specifications are strictly followed to maintain thermal interface integrity and prevent mechanical stress on the leads during installation.

Selection Notes

Select this component when designing narrow band amplifiers requiring high voltage breakdown and significant output power density. The matched pair characteristic simplifies circuit balancing in push-pull topologies. Evaluate the thermal management strategy carefully, as the rated power dissipation depends on maintaining the case mounting surface at 25 °C. Consider the impedance values provided for input and output matching networks at the target operating frequency.

Part Context

This device belongs to Microchip's family of RF MOSFET transistors utilizing silicon technology. It is housed in the T3A package, which is distinct from standard TO-247 or TO-264 packages used in other series. The product line targets applications demanding high efficiency and ruggedness in radio frequency environments, specifically catering to industrial, scientific, and medical equipment sectors.

Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FAQ

What is the maximum electrical ruggedness rating for the ARF475FL?

The device exhibits no degradation in output power when subjected to a Voltage Standing Wave Ratio (VSWR) of 5:1.

How should the T3A package be mounted thermally?

Use four 4-40 screws with a torque of 2.5 to 3.5 in-lb. Apply a minimal amount of high-efficiency thermal grease to a smooth, flat copper heat spreader to reduce surface irregularities.

What is the typical forward transconductance value?

The typical forward transconductance is 5.1 S, measured at VDS = 15 V and ID = 5 A.