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The ARF521 is an N-channel enhancement mode RF power MOSFET manufactured by Microsemi Corporation. It is designed for high voltage operation, featuring a drain-source breakdown voltage of 500V and a continuous drain current of 50mA. The device supports a maximum output power of 150W with a gain of 15dB at a frequency of 81MHz. It operates within a supply voltage range up to 165V and is suitable for applications requiring frequencies up to 150MHz.
Verify the specific datasheet revision and manufacturer source when sourcing this component. Ensure the supplier provides official documentation confirming the part number ARF521 from Microsemi Corporation. Check for any specific handling requirements related to the hermetic sealed glass package and metallurgical bonding process described in the official specifications.
Select the ARF521 for applications requiring high voltage RF performance with moderate power output. Consider its 500V breakdown voltage and 150W power capability relative to the operating frequency range of up to 150MHz. Evaluate the thermal management needs associated with the DO-213AA package and ensure the circuit design accommodates the 165V operational limits.
The ARF521 belongs to the family of RF power transistors produced by Microsemi Corporation, formerly known as Microsemi. These components are engineered for robust performance in demanding radio frequency environments. The device utilizes silicon technology housed in a hermetically sealed glass package, distinguishing it from standard plastic encapsulated counterparts used in lower reliability applications.
Public confirmed substitute part numbers are not available in the provided documentation.