ART35FEU

Overview

The ART35FEU is a 35 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates across a frequency range of 1 MHz to 650 MHz. The device supports drain-source voltages up to 65 V and enables Class E operation up to 53 V. Key electrical parameters include a typical power gain of 29 dB to 31 dB, a drain efficiency of 67% to 70.5%, and an input return loss of -24 dB at 35 W output power. It features integrated dual-sided ESD protection and excellent thermal stability with a junction-to-case thermal resistance of 0.92 K/W.

Feature Summary

• Advanced Rugged Technology (ART) ensures excellent ruggedness with no device degradation under load mismatch conditions.
• Integrated dual-sided ESD protection facilitates Class C operation and complete switch-off capabilities.
• Broadband design optimized for efficient performance across the 1 MHz to 650 MHz frequency spectrum.
• High breakdown voltage qualification allows flexible biasing for various application requirements.

Applications

• Industrial, scientific and medical (ISM) applications such as plasma generators, MRI systems, CO2 lasers, and particle accelerators.
• Broadcast services including FM radio and VHF TV transmission.
• Radar systems for non-cellular communications and UHF radar operations.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the component meets all relevant RoHS compliance requirements before integration into final assemblies. Ensure proper electrostatic discharge precautions are observed during storage and assembly processes.

Selection Notes

Select this component for designs requiring high reliability in broadband RF environments. Consider the thermal management requirements given the junction temperature limits and thermal resistance characteristics. Evaluate the impedance matching network based on the provided push-pull impedance data for optimal power transfer at the target operating frequency.

Part Context

The ART35FEU belongs to Ampleon's ART family of LDMOS transistors, designed for robust performance in demanding RF power applications. This series emphasizes durability and efficiency, making it suitable for industrial and broadcast sectors where consistent output power and longevity are critical operational factors.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalent part numbers. Do not assume compatibility with other manufacturers' devices without comprehensive electrical and mechanical validation.

FAQ

What is the maximum drain-source voltage for Class E operation?

The device enables Class E operation up to a drain-source voltage of 53 V.

How does the device handle load mismatches?

It withstands load mismatches corresponding to VSWR ≥ 65:1 through all phases in Class-AB operation without device degradation.

What is the typical power gain at 35 W output?

The typical power gain is between 29 dB and 31 dB when delivering 35 W of output power.