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The ART450FEU is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 650 MHz and delivers up to 450 W output power. The device features a drain-source breakdown voltage of 203 V minimum, with qualified operation up to 65 V. Key electrical parameters include a typical power gain of 27 dB at 225 MHz and a drain efficiency of 74% under pulsed conditions. The unit utilizes an SOT1121A-5 flanged package with screw mount installation.
Verify the specific ordering suffix against official Ampleon documentation before purchase. Confirm that the component meets RoHS compliance requirements as stated in the product details. Ensure the packaging type matches the required handling specifications for electrostatic sensitive devices.
Select this component for applications requiring high power density and broadband performance between 1 MHz and 650 MHz. Consider the thermal resistance characteristics when designing heat sinks for continuous wave or high-duty cycle pulsed operations. Verify impedance matching networks align with the specified input and output impedances at the target operating frequency.
This part belongs to the ART series of power LDMOS transistors manufactured by Ampleon. The series focuses on ruggedness and reliability for demanding RF environments. The ART450FEU specifically targets high-power industrial and broadcast applications where stability under load mismatch is critical.
Consult the official Ampleon replacement guide for verified substitutes. Cross-referencing requires matching package type, pinout configuration, and key electrical ratings such as breakdown voltage and output power capabilities.
The maximum junction temperature is 225 °C.
No, unless expressly stated otherwise, the product is not automotive qualified and is not suitable for automotive use.
It withstands a load mismatch corresponding to VSWR ≥ 65:1 through all phases in Class-AB operation.