ART700FHGJ

Overview

The ART700FHGJ is a 700 W LDMOS RF power transistor based on Advanced Rugged Technology (ART), designed for ISM, broadcast, and non-cellular communications. It operates from 1 MHz to 450 MHz with a drain-source breakdown voltage of 177 V and a maximum junction temperature of 225 °C. At 108 MHz under pulsed conditions (tp=100 µs, δ=10%) at VDS=55 V, it delivers 800 W output power with typical drain efficiency of 77.6% and gain of 28.6 dB. The device features integrated dual-sided ESD protection, qualified up to VDS=55 V, and utilizes the SOT1214C package.

Feature Summary

• Advanced Rugged Technology ensures excellent ruggedness with no device degradation under load mismatch conditions.
• Integrated dual-sided ESD protection enables Class C operation and complete switch-off capability.
• High breakdown voltage supports Class E operation at VDS = 48 V and suitability for VDS = 50 V and 55 V.
• Broadband design optimized for efficient performance across Industrial, Scientific, Medical, Broadcast, and Communications sectors.

Applications

• Plasma generators
• MRI systems
• CO2 lasers
• Particle accelerators
• FM radio broadcasting

Procurement Notes

Verify the ordering suffix 'J' corresponds to the TR13 tape-and-reel packaging format as specified in the official Ampleon data sheet. Confirm that the component meets RoHS compliance requirements by checking the product details on the manufacturer's website. Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select this component for applications requiring high power density and broadband operation between 1 MHz and 450 MHz. The ART700FHGJ variant is suitable for designs utilizing reel-based assembly processes. Designers must account for the thermal resistance of 0.175 K/W and ensure adequate heat sinking to maintain junction temperatures within the 225 °C limit during continuous or pulsed operation.

Part Context

The ART700FHGJ belongs to the ART700FH family of power LDMOS transistors manufactured by Ampleon. This family includes variants such as ART700FHU and ART700FHSU, which differ primarily in packaging formats like trays versus reels. All variants share identical electrical characteristics and are built on the same Advanced Rugged Technology platform for consistent performance in RF power applications.

Replacement Considerations

Direct replacements include ART700FHU and ART700FHSU, which share identical electrical specifications but utilize different packaging types (tray vs. earless flanged ceramic). Verify mechanical fit and thermal interface compatibility when substituting these variants.

FAQ

What is the maximum load mismatch the ART700FHGJ can withstand?

The device can withstand a load mismatch corresponding to VSWR ≥ 65:1 through all phases under specified pulsed operating conditions.

Does the ART700FHGJ support Class E operation?

Yes, the high breakdown voltage enables Class E operation at VDS = 48 V.

What is the ESD classification for this component?

It is classified as C2A for Charged Device Model (CDM) and Level 2 for Human Body Model (HBM).