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The ART700FHSU is a dual N-Channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates within a frequency range of 1 MHz to 450 MHz and is housed in an SOT1214B earless flanged ceramic package. The device supports drain-source voltages up to 55 V, with a breakdown voltage of 177 V minimum. At 108 MHz under pulsed conditions (tp=100µs, δ=10%), it delivers 700 W output at 50 V and 800 W at 55 V. Key electrical parameters include a typical power gain of 28.6 dB, drain efficiency of 77.6%, and gate-source threshold voltage between 1.5 V and 2.5 V. Thermal resistance from junction to case is typically 0.175 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and pin configuration. The ART700FHSU corresponds to the SOT1214B earless flanged ceramic package. Confirm RoHS compliance status via official product details before procurement. Ensure handling procedures meet ESD sensitivity requirements specified in the datasheet.
Select this component for applications requiring high power density and extreme ruggedness in the 1 MHz to 450 MHz range. The device supports both 50 V and 55 V supply rails, offering flexibility for Class AB and Class E operations. Consider the thermal resistance and junction temperature limits when designing heat dissipation solutions for continuous wave or high-duty-cycle pulsed modes.
The ART700FHSU belongs to Ampleon's ART family of LDMOS transistors, designed for high-power RF amplification. It shares architectural similarities with the ART700FH and ART700FHG variants, differing primarily in package style. The SOT1214B package provides an earless flanged design for mounting convenience while maintaining robust thermal performance for broadcast and industrial environments.
Direct replacements within the same series include ART700FH (SOT1214A) and ART700FHG (SOT1214C). Verify mechanical fit and pinout compatibility due to differences in flange and lead configurations between package types.