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The ART800PEY is an 800 W LDMOS RF power transistor based on Advanced Rugged Technology (ART), designed for ISM, broadcast, and communications applications across a frequency range of 1 MHz to 650 MHz. It features dual N-channel sections with a drain-source breakdown voltage of 203 V minimum and a maximum rated VDS of 65 V. At 108 MHz pulsed operation, it delivers 800 W output power with a typical gain of 29.2 dB and drain efficiency of 74.5%. The device supports Class E operation at 53 V and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix 'Y' against the manufacturer's current documentation to confirm packaging details, as suffixes often denote tray or reel configurations. Ensure compliance with RoHS requirements by checking the official product details page. Confirm availability through authorized Ampleon distributors, as supply status may vary by region.
Select this component for designs requiring high power density in the HF to VHF spectrum. Verify that the application circuit can handle the specified 200 V absolute maximum drain-source voltage. Ensure thermal management solutions address the junction-to-case thermal resistance of 0.137 K/W to maintain reliability within the 225 °C maximum junction temperature limit.
This part belongs to Ampleon's ART series of LDMOS power transistors, which are engineered for robust performance in industrial and broadcast environments. The ART technology emphasizes high ruggedness and efficiency, making these devices suitable for demanding RF power amplifier architectures where reliability under varying load conditions is critical.
The ART800PEG serves as the leaded variant of this family. Verify pin compatibility and package dimensions when substituting between the ART800PEY and other ART series members. Consult the manufacturer for updated cross-reference lists to ensure electrical equivalence.