AT-31033-TR1G

Overview

The AT-31033-TR1G is a silicon NPN RF bipolar transistor manufactured by Broadcom Limited. Designed for high-frequency applications, it operates up to 30 GHz with a minimum DC collector-base gain (hFE) of 70. The device features a maximum collector-emitter voltage (VCEO) of 5.5 V and an emitter-base voltage (VEBO) of 1.5 V. It supports a continuous collector current of 16 mA and dissipates up to 150 mW of power. Operating temperatures range from -65°C to +150°C. Packaged in an SOT-23 surface-mount format, this component serves as the tape-and-reel variant of the AT-31033 series.

Feature Summary

• High-frequency operation capability up to 30 GHz
• Low current design optimized for RF signal processing
• Wide thermal operating range suitable for harsh environments

Applications

• RF amplifier stages in communication systems
• Microwave circuit design
• Signal processing modules requiring low-current biasing

Procurement Notes

Verify the specific suffix 'TR1G' against official Broadcom documentation to confirm packaging and reel specifications. Confirm end-of-life status and availability through authorized channels before integration into new designs.

Selection Notes

Select this component when a silicon NPN transistor with 30 GHz cutoff frequency and low collector current requirements is needed. Ensure the SOT-23 package fits the PCB layout constraints and that the 150 mW power dissipation rating aligns with the thermal management strategy.

Part Context

This part belongs to the AT-31033 family of RF bipolar transistors. The 'TR1G' suffix typically denotes a specific tape-and-reel packaging configuration compliant with RoHS standards, distinguishing it from other packaging variants like cut tape or bulk.

Replacement Considerations

Check for direct substitutes within the AT-31033 series or equivalent RF NPN transistors from other manufacturers offering similar 30 GHz performance and SOT-23 packaging. Verify pinout compatibility and electrical parameter overlaps.