AT-32011-BLKG

Overview

The AT-32011-BLKG is a high-performance NPN silicon bipolar transistor designed for low current and low voltage operation. It utilizes a self-aligned-transistor process with a 3.2-micron emitter-to-emitter pitch to achieve high ft. The device is housed in a 4-lead SOT-143 surface mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 5.5 V, an emitter-base voltage (VEBO) of 1.5 V, and a maximum collector current of 32 mA. At 2.7 V and 2 mA bias, it provides a minimum noise figure of 1.0 dB and associated gain of 12.5 dB at 0.9 GHz.

Feature Summary

• Optimized for maximum transition frequency at low voltage operation
• Features reduced parasitic design with 20 emitter finger interdigitated geometry
• Nitride passivated die for enhanced surface protection
• Compatible with standard high-volume surface mount assembly techniques

Applications

• Low Noise Amplifiers (LNA) in wireless markets
• Gain stages and buffers for battery-powered systems
• Oscillators and active mixers operating at 900 MHz, 1.8 GHz, or 2.4 GHz

Procurement Notes

Verify the component status as End-of-Life before initiating procurement. Confirm that the BLKG suffix indicates lead-free packaging and bulk quantity specifications. Ensure compatibility with existing supply chains given the obsolescence notification. Validate RoHS compliance documentation against specific project requirements prior to finalizing orders.

Selection Notes

Select this component when designing circuits requiring high performance at low voltages, specifically optimized for 2.7 V battery operation. Consider the SOT-143 package for improved thermal and RF performance compared to the 3-lead alternative. Evaluate the moderate power dissipation and low noise resistance characteristics against system sensitivity requirements.

Part Context

This part belongs to the Avago AT-320 series of low-current, high-performance NPN silicon bipolar transistors. It shares the same internal die structure as the AT-32033 but utilizes a different package configuration. The series is fabricated using a 10 GHz ft, 30 GHz fMAX self-aligned-transistor process technology.

Replacement Considerations

The AT-32033 serves as a functional equivalent utilizing the identical die but packaged in a 3-lead SOT-23 format. Designers must account for the pinout differences and potential variations in thermal resistance when substituting between these two package types.