AT-41535G

Overview

The AT-41535G is a general-purpose NPN silicon bipolar transistor designed for low noise, wideband amplifier, mixer, and oscillator applications in VHF, UHF, and microwave frequencies. It utilizes Avago Technologies' 10 GHz fT Self-Aligned-Transistor (SAT) process with a 4-micron emitter-to-emitter pitch and nitride passivation. The device operates within an absolute maximum collector-emitter voltage of 12V and a collector current of 60mA. Key electrical specifications at VCE=8V include a typical gain-bandwidth product (fT) of 8.0 GHz, an optimum noise figure of 1.7 dB at 2.0 GHz, and associated gains of 14.0 dB at 2.0 GHz and 10.0 dB at 4.0 GHz.

Feature Summary

• Utilizes a 10 GHz fT self-aligned-transistor process for high-frequency performance
• Features a cost-effective ceramic micro-strip package for surface mount assembly
• Optimized for low noise figure and moderate power applications
• Designed with easy-to-match impedances for wideband use

Applications

• Low noise amplifiers
• Wideband amplifiers
• Mixers
• Oscillators

Procurement Notes

Verify the component datasheet to confirm the specific ordering suffix matches the required quantity per reel or tube. Ensure the manufacturer designation aligns with the original Avago Technologies specification before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high gain-bandwidth products up to 8.0 GHz and low noise figures below 3.0 dB at 4.0 GHz. Consider the 35 micro-X package dimensions and thermal resistance when designing the PCB layout and heat dissipation strategy.

Part Context

This part belongs to the AT-41535 family of general-purpose NPN bipolar transistors. It shares the same die and core technology as other variants but is distinguished by its specific packaging and potential quantity variations indicated by the 'G' suffix.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.