AT-42035G

Overview

The AT-42035G is a general-purpose NPN silicon bipolar transistor designed for high-frequency applications up to 6 GHz. Fabricated using a 10 GHz fT self-aligned-transistor process, it features a 35 micro-X surface mount package with a 4-micron emitter-to-emitter pitch and 20 interdigitated emitter fingers. Key electrical specifications include a typical P1 dB of 21.0 dBm at 2.0 GHz and 20.5 dBm at 4.0 GHz. The device offers a typical gain-bandwidth product (fT) of 8.0 GHz and an optimum noise figure of 1.9 dB at 2.0 GHz. Absolute maximum ratings specify a collector-emitter voltage of 12 V, collector current of 80 mA, and power dissipation of 600 mW.

Feature Summary

• High output power capability suitable for medium power amplifier stages
• Low noise figure optimized for low noise amplifier implementations
• Self-aligned-transistor process ensures excellent device uniformity and reliability
• Surface mount ceramic microstrip package facilitates easy impedance matching

Applications

• Low noise wideband amplifiers in VHF, UHF, and microwave frequencies
• Mixer circuits operating in the VHF to microwave spectrum
• Oscillator designs requiring stable high-frequency performance

Procurement Notes

Verify component authenticity by checking markings against official Avago/Broadcom datasheet specifications. Confirm package type matches the 35 micro-X footprint dimensions. Ensure compliance with RoHS directives if required by your specific application standards. Review absolute maximum ratings carefully to prevent permanent damage during circuit operation.

Selection Notes

Select this transistor when designing circuits requiring a balance between medium output power and low noise performance in the VHF to 6 GHz range. Consider the 35 micro-X package size for space-constrained surface mount layouts. Evaluate biasing conditions against the specified VCE and IC parameters to achieve optimal gain and noise figures for your target frequency.

Part Context

The AT-42035G belongs to the AT-42035 family of silicon bipolar transistors manufactured by Broadcom Limited (formerly Avago Technologies). It utilizes a 10 GHz fT self-aligned-transistor fabrication process with gold metalization and nitride passivation. The device is specifically engineered for general-purpose high-frequency applications where reliable performance and ease of matching are critical requirements.

Replacement Considerations

No direct public substitute part numbers are documented in the provided source material.