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The ATF-34143-TR1G is a GaAs pHEMT RF transistor manufactured by Broadcom Limited. It operates at frequencies up to 2 GHz with an N-Channel configuration. Key electrical parameters include a gain of 17.5 dB, a noise figure of 0.5 dB, and a P1dB compression point of 20 dBm. The device supports a maximum drain-source voltage (Vds) of 5.5 V and a gate-source voltage (Vgs) of -5 V. Continuous drain current is rated at 145 mA, with power dissipation of 725 mW. It features a minimum forward transconductance of 230 mmho and functions within a temperature range up to +160°C. The component is housed in an SOT-343 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance details via official datasheets. Ensure supply chain integrity by checking lot traceability and storage conditions prior to assembly. Validate part markings against official specifications to prevent counterfeit introduction into production lines.
Select this component for designs requiring moderate gain and low noise at 2 GHz. Compare with ATF-35143 for lower current needs or ATF-54143 for higher linearity. Ensure biasing circuits support the 145 mA drain current and 725 mW thermal dissipation limits. Verify PCB layout compatibility with the SOT-343 footprint and thermal requirements.
This part belongs to the ATF-34xxx series of GaAs pHEMT transistors from Broadcom. It shares the SOT-343 package with variants like ATF-34143-BLKG and ATF-34143-TR2G. The series targets RF amplification applications where compact size and reliable performance are critical. It represents a specific trim level within the broader family of low-noise FETs offered by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consider ATF-34143-TR2G or ATF-34143-BLKG as potential functional equivalents within the same series, pending verification of pinout and parameter equivalence against original design requirements.