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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 1.5V 77SMD
- Series：-
- Mfr：Broadcom Limited
- Package：Bulk
- Technology：pHEMT FET
- Frequency：12GHz
- Gain：12dB
- Voltage - Test：1.5 V
- Current Rating (Amps)：45mA
- Noise Figure：0.5dB
- Current - Test：10 mA
- Power - Output：5dBm
- Voltage - Rated：3 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：4-SMD (77 Pack)
- Supplier Device Package：77
- Configuration：-
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Overview
The ATF-36077-STR is a pseudomorphic high electron mobility transistor (PHEMT) designed for ultra-low noise applications across the 2–18 GHz frequency range. It features a low parasitic ceramic microstrip package and operates at VDS = 1.5 V and IDS = 10 mA. Typical specifications include a noise figure of 0.3 dB at 4 GHz and 0.5 dB at 12 GHz, with associated gains of 17 dB and 12 dB respectively. The device has a nominal 0.2 micron gate length and a total gate periphery of 200 microns.
Feature Summary
- Ultra-low noise figure performance optimized for sensitive signal reception
- High associated gain characteristics suitable for cascaded amplifier stages
- Low noise resistance reduces sensitivity to input impedance match variations
- Robust construction using gold-based metalization and nitride passivation
Applications
- Ku-band Direct Broadcast Satellite (DBS) Television systems
- C-band Television Receive Only (TVRO) Low Noise Block downconverters
- Ultra-sensitive low noise amplifiers operating in the 2-18 GHz range
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging format. The STR designation indicates strip packing rather than tape-and-reel configuration. Ensure compatibility with existing inventory management systems that may require reel-specific handling procedures.
Selection Notes
Select this component when designing broadband low noise amplifiers requiring minimal noise resistance impact from impedance mismatches. Verify bias conditions align with the specified 1.5 V drain-source voltage and 10 mA drain current for optimal noise figure and gain performance within the target frequency band.
Part Context
This device belongs to the Avago Technologies PHEMT family, utilizing GaAs technology. It serves as an ideal first-stage component in extremely low noise cascades due to its premium sensitivity and repeatable performance consistency across the microwave spectrum.
Replacement Considerations
Consult official substitution guides for equivalent PHEMT devices. Verify pinout compatibility and electrical parameter overlap before implementing any alternative components in existing designs.
FAQ
What is the typical noise figure at 12 GHz?
The typical noise figure is 0.5 dB at 12 GHz under standard test conditions.
How does low noise resistance benefit circuit design?
It reduces the sensitivity of noise performance to variations in input impedance match, simplifying the design of broadband low noise amplifiers.
What are the absolute maximum ratings for Drain-Source Voltage?
The absolute maximum rating for Drain-Source Voltage (VDS) is +3 V.
