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Product Detailed Parameters
- Description：RF MOSFET PHEMT FET 1.5V 77SMD
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Technology：pHEMT FET
- Frequency：12GHz
- Gain：12dB
- Voltage - Test：1.5 V
- Current Rating (Amps)：45mA
- Noise Figure：0.5dB
- Current - Test：10 mA
- Power - Output：5dBm
- Voltage - Rated：3 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：4-SMD (77 Pack)
- Supplier Device Package：77
- Configuration：-
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Overview
The ATF-36077-TR1 is an ultra-low-noise pseudomorphic high electron mobility transistor (PHEMT) designed for the 2–18 GHz frequency range. It features a low parasitic ceramic microstrip package and operates at VDS = 1.5 V and IDS = 10 mA. Typical noise figures are 0.3 dB at 4 GHz and 0.5 dB at 12 GHz, with associated gains of 17 dB and 12 dB respectively. The device has a nominal 0.2 micron gate length and 200 microns total gate periphery. Absolute maximum ratings include a drain-source voltage of +3 V, gate-source voltage of -3 V, and total power dissipation of 180 mW.
Feature Summary
- Utilizes PHEMT technology for premium sensitivity and low noise resistance.
- Features a low parasitic surface-mountable ceramic package.
- Provides repeatable performance suitable for extremely low noise cascades.
Applications
- 12 GHz DBS LNB (Low Noise Block)
- 4 GHz TVRO LNB (Low Noise Block)
- Ultra-Sensitive Low Noise Amplifiers
Procurement Notes
Verify the component against official datasheets to confirm pinout and electrical specifications before integration. Ensure proper biasing conditions are maintained within absolute maximum ratings to prevent permanent damage. Check for RoHS compliance status if required by specific environmental regulations.
Selection Notes
Select this component for designs requiring minimal noise figure across wide bandwidths up to 18 GHz. Consider the low noise resistance which reduces sensitivity to input impedance match variations. Verify that the operating environment stays within the specified temperature range and thermal limits.
Part Context
This part belongs to the ATF-36077 series of GaAs PHEMT devices manufactured by Avago Technologies. It is specifically engineered for Ku-band Direct Broadcast Satellite systems and C-band Television Receive Only applications where high gain and low noise are critical.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the typical noise figure at 12 GHz?
The typical noise figure at 12 GHz is 0.5 dB.
What are the absolute maximum ratings for drain-source voltage?
The absolute maximum rating for drain-source voltage is +3 V.
What is the total power dissipation limit?
The total power dissipation limit is 180 mW.
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