ATF-36163-TR1G

ATF-36163-TR1G

  • Description:RF MOSFET PHEMT FET 2V SOT363
  • Series:-

SKU:8520c1cd94bc Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 2V SOT363
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:4GHz
  • Gain:15.8dB
  • Voltage - Test:2 V
  • Current Rating (Amps):40mA
  • Noise Figure:0.6dB
  • Current - Test:15 mA
  • Power - Output:5dBm
  • Voltage - Rated:3 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Configuration:-

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ATF-36163-TR1G

Overview

The ATF-36163-TR1G is a low-noise pseudomorphic high electron mobility transistor (PHEMT) designed for surface mount applications. It operates within a frequency range of 1.5 to 18 GHz and is housed in an SOT-363 (SC-70) package. When optimally matched for minimum noise figure, the device provides a typical noise figure of 1 dB at 12 GHz and 0.6 dB at 4 GHz. Associated gain specifications are typically 9.4 dB at 12 GHz and 15.8 dB at 4 GHz. The maximum available gain reaches 11 dB at 12 GHz and 17 dB at 4 GHz.

Feature Summary

  • Utilizes pseudomorphic high electron mobility transistor technology for enhanced performance
  • Designed for low-noise amplification in surface mount configurations
  • Supports wideband operation across microwave frequencies

Applications

  • 12 GHz DBS downconverters
  • 4 GHz TVRO downconverters
  • S or L band low noise amplifiers

Part Context

This component belongs to the ATF series of PHEMT devices manufactured by Broadcom Limited, formerly Avago Technologies. It is part of a family of microwave transistors optimized for low-noise front-end applications. The TR1G suffix indicates tape-and-reel packaging with lead-free compliance, distinguishing it from other packaging variants within the same functional family.

ATF-36163-TR1GATF-36163-TR1G

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