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The ATF-50189 is an Enhancement Mode Pseudomorphic HEMT (E-pHEMT) FET housed in a surface-mount SOT-89 package. It operates within a frequency range of 400 MHz to 3.9 GHz, designed for high linearity and medium power applications. At a typical bias of 4.5V and 280 mA at 2 GHz, it delivers a 45 dBm Output IP3, 29 dBm P1dB output power, 1.1 dB noise figure, and 15.5 dB gain. The device achieves 62% Power Added Efficiency at P1dB with a Linearity Figure of Merit of 14 dB. Absolute maximum ratings include a drain-source voltage of 7V, total power dissipation of 2.25W, and a channel temperature limit of 150°C.
Verify component authenticity by checking package markings against official documentation. Confirm the device code and month code align with manufacturing records. Ensure handling procedures follow electrostatic discharge precautions specified in relevant application notes to prevent damage during assembly.
Select this component when designs require simultaneous optimization of noise figure and linearity without negative gate voltages. Evaluate thermal resistance requirements based on the specific board layout and ambient conditions. Consider the operating frequency range and required output power levels to ensure the device meets system specifications.
This device belongs to the ATF-5018x series of pseudomorphic HEMTs. It shares architectural similarities with other components in the lineup but offers distinct electrical characteristics tailored for specific wireless infrastructure roles. The SOT-89 package provides a cost-effective surface-mount solution for RF applications.
ATF-53189