ATF-511P8-BLK

Overview

The Broadcom ATF-511P8 is a single-voltage, high linearity enhancement mode pseudomorphic HEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC) package measuring 2.0 x 2.0 x 0.75 mm. Operating from 50 MHz to 6 GHz, it functions as a medium-power amplifier with excellent uniformity. At 2 GHz and 4.5V/200 mA bias, it delivers a typical gain of 14.8 dB, noise figure of 1.4 dB, output IP3 of 41.7 dBm, P1dB of 30 dBm, and PAE of 69%. The device utilizes backside metalization for thermal dissipation and visual solder reflow verification.

Feature Summary

• Single positive gate voltage operation eliminates the need for negative gate bias associated with depletion mode devices.
• High linearity performance combined with low noise figure suitable for demanding RF applications.
• Thermally efficient package with backside metalization providing excellent heat dissipation and solder reflow evidence.
• Enhanced product specification uniformity across manufacturing lots.

Applications

• Front-end LNA Q2 and Q3 driver or pre-driver amplifiers for Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifiers for WLAN, WLL/RLL, and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The BLK suffix indicates antistatic bag packaging containing 100 units, whereas TR1 and TR2 variants correspond to tape-and-reel configurations. Ensure compatibility with required supply quantities and handling standards before procurement.

Selection Notes

Select this component for designs requiring high linearity and moderate power output within the Sub-6 GHz range. Verify that the PCB layout accommodates the 2x2 mm LPCC footprint and provides adequate thermal vias for the exposed drain pad. Confirm bias circuitry supports the single positive Vgs requirement without negative gate supplies.

Part Context

This device belongs to the family of enhancement mode pseudomorphic HEMTs designed for RF power amplification. It replaces conventional depletion mode devices by simplifying bias requirements. The ATF-511P8 is manufactured using GaAs pHEMT technology, offering a balance of gain, linearity, and efficiency in a compact surface-mount package.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet. Designers should consult manufacturer application notes or cross-reference databases for compatible alternatives if the ATF-511P8 is unavailable.

FAQ

What is the operational gate voltage range?

The operational gate voltage ranges from 0.25 V to 0.8 V when biased at Vds = 4.5V and Ids = 200 mA.

How is thermal management handled in this package?

The package features backside metalization which provides excellent thermal dissipation and serves as visual evidence of proper solder reflow during assembly.

What is the maximum channel temperature rating?

The absolute maximum channel temperature (TCH) is rated at 150°C.