ATF-52189-TR2

$2.18

Description：RF MOSFET E-PHEMT 4.5V SOT89
Series：-

SKU:c21f20ac8432 Category: RF FETs, MOSFETs Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF MOSFET E-PHEMT 4.5V SOT89
Series：-
Mfr：Broadcom Limited
Package：Tape & Reel (TR)
Technology：E-pHEMT
Frequency：2GHz
Gain：16dB
Voltage - Test：4.5 V
Current Rating (Amps)：500mA
Noise Figure：1.5dB
Current - Test：200 mA
Power - Output：27dBm
Voltage - Rated：7 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Configuration：-

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ATF-52189-TR2

Overview

The ATF-52189 is a high linearity mode enhancement pseudomorphic HEMT (E-pHEMT) in an SOT-89 surface mount package. It operates from 50 MHz to 6 GHz with single positive Vgs bias, eliminating negative gate voltage requirements. Key electrical specifications at 4.5V and 200 mA include a typical gain of 16.0 dB, output IP3 of 42.0 dBm, P1dB of 27.0 dBm, and noise figure of 1.50 dB at 2 GHz. Power added efficiency reaches 55% at P1dB.

Feature Summary

Single voltage operation utilizing enhancement mode technology for simplified biasing
High linearity performance with elevated output third-order intercept point
Low noise figure characteristics suitable for sensitive front-end applications

Applications

Front-end LNA Q2 and Q3 stages for Cellular/PCS and WCDMA wireless infrastructure
Driver or pre-driver amplifier for WLAN, WLL/RLL, and MMDS applications
General purpose discrete E-pHEMT amplifiers requiring medium power and high linearity

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging configuration. The standard device is available in tape-and-reel options. Confirm RoHS compliance status and lead-free manufacturing details directly with the supplier documentation prior to procurement.

Selection Notes

Select this component for designs requiring medium-power amplification with strict linearity constraints. Ensure the bias network supports the specified 4.5V drain-source voltage and 200 mA quiescent current. Verify thermal management capabilities as the device dissipates significant power during high-output operations.

Part Context

This device belongs to the category of high linearity RF amplifiers designed for wireless communication systems. It serves as a critical interface between low-noise reception and high-power transmission stages. The SOT-89 package provides a cost-effective solution for surface mount assembly in compact mobile and infrastructure hardware.