ATF-54143-TR1

Overview

The ATF-54143-TR1 is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Designed for VHF through 6 GHz frequency ranges, it combines high gain, high linearity, and low noise characteristics. At 2 GHz with Vds=3V and Ids=60mA, the device typically achieves a noise figure of 0.5 dB, an associated gain of 16.6 dB, an output third-order intercept point (OIP3) of 36.2 dBm, and an output power at 1 dB gain compression (P1dB) of 20.4 dBm. The absolute maximum ratings include a drain-source voltage of 5V, a gate-source voltage range of -5 to 1V, and a total power dissipation of 725 mW.

Feature Summary

• Enhancement Mode Technology requiring positive Vgs, eliminating the need for negative gate voltage supplies.
• High dynamic range performance characterized by high linearity and low noise figure.
• Small surface mount SOT-343 (SC-70) plastic package suitable for cost-effective designs.

Applications

• Low noise amplifier for cellular/PCS base stations
• LNA for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-PHEMT for other ultra low noise applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. The 'TR1' designation indicates tape-and-reel packaging options are available. Ensure compliance with RoHS standards and lead-free requirements as specified in the official datasheet. Confirm availability status as product lifecycles may change over time.

Selection Notes

Select this component for designs operating between 450 MHz and 6 GHz where low noise and high linearity are critical. The enhancement mode architecture simplifies biasing by allowing DC grounding of source leads and using positive gate voltages. Ensure thermal management supports up to 725 mW dissipation and consider stability networks for low-frequency operation.

Part Context

Originally manufactured by Agilent Technologies, this component is part of the Broadcom Limited portfolio following corporate acquisitions. It serves as a standard discrete transistor solution for RF front-end modules. The device utilizes an 800 micron gate width PHEMT structure optimized for commercial wireless communication systems.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the verified source material. Designers should consult official replacement guides or contact the manufacturer directly for equivalent components.

FAQ

How does the biasing of the ATF-54143 differ from depletion mode devices?

Unlike depletion mode PHEMTs that require a negative gate voltage relative to the source, the ATF-54143 is an enhancement mode device requiring a positive Vgs (approximately 0.6V for 60 mA nominal current). This allows the source to be DC grounded.

What is the typical noise figure at 2 GHz?

At 2 GHz with a drain-source voltage of 3V and a drain current of 60 mA, the typical noise figure is 0.5 dB.

What is the recommended passive biasing configuration?

Passive biasing uses a voltage divider (R1/R2) derived from the drain voltage to set the gate potential. Resistor R3 provides feedback to stabilize drain current, while resistors R1 and R2 determine the specific Vgs required for the target Ids.