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The ATF-54143-TR1G is a single N-channel pHEMT RF transistor manufactured by Broadcom Limited using GaAs technology. It operates at frequencies up to 2 GHz with a gain of 16.6 dB and a noise figure of 0.5 dB. The device features a drain-source breakdown voltage (Vds) of 5 V, a gate-source breakdown voltage range of -5 V to 1 V, and a continuous drain current (Id) of 120 mA. Power dissipation is rated at 725 mW, with a maximum operating temperature of +150°C. It is housed in an SOT-343 surface-mount package.
Verify component authenticity through authorized channels as this part is marked obsolete. Confirm RoHS compliance status via official documentation before integration. Ensure supply chain stability due to end-of-life status. Validate datasheet revisions match specific manufacturing batches. Check for availability of engineering samples if production quantities are required.
Select this component when designing circuits for 2 GHz applications requiring minimal signal degradation. Compare noise figure and gain specifications against alternative pHEMT devices. Consider thermal management capabilities given the 725 mW power dissipation limit. Evaluate SOT-343 footprint compatibility with existing PCB layouts. Assess biasing requirements against available power supplies.
This device belongs to the ATF series of radio frequency transistors produced by Broadcom. It shares the SOT-343 package form factor with related models like the ATF-34143. The series targets wireless communication infrastructure and consumer electronics requiring reliable RF amplification.
Publicly confirmed substitute part numbers are not available in the provided data.