ATF-54143-TR2G

Overview

The ATF-54143-TR2G is an enhancement mode pseudomorphic high electron mobility transistor (E-PHEMT) manufactured by Broadcom Limited. Housed in a compact SOT-343 surface-mount package, this GaAs-based device operates at frequencies up to 2 GHz with a maximum power dissipation of 725 mW. It delivers a typical gain of 16.6 dB and a noise figure of 0.5 dB when biased at 3 V and 60 mA. The component supports a continuous drain current of 120 mA and features a 5 V drain-source breakdown voltage. Designed for low-noise amplification, it offers high linearity with an output third-order intercept point of 36.2 dBm and an output power at 1 dB compression of 20.4 dBm.

Feature Summary

• Enhancement mode technology eliminates the need for negative gate voltage biasing required by conventional depletion mode devices.
• High dynamic range performance combined with ultra-low noise characteristics suitable for sensitive receiver front-ends.
• Small plastic surface mount packaging facilitates automated assembly and reduces board space requirements.

Applications

• Low noise amplifier stages for cellular and PCS base stations
• LNA modules for WLAN, WLL/RLL, and MMDS systems
• General purpose discrete noise applications in RF circuits

Procurement Notes

Verify component authenticity through authorized distributors or original manufacturer channels due to obsolete status. Confirm RoHS compliance and lead-free specifications against current regulatory requirements. Validate datasheet revisions to ensure parameter consistency with design simulations. Check for potential supply chain disruptions given the end-of-life classification.

Selection Notes

Evaluate thermal management capabilities as the device dissipates up to 725 mW in a small footprint. Ensure biasing circuits provide positive gate voltage to activate the enhancement mode architecture. Compare noise figure and gain metrics against alternative E-PHEMTs if higher frequency operation beyond 2 GHz is required. Verify impedance matching networks align with the specified S-parameter data for optimal performance.

Part Context

This component belongs to the Avago/Broadcom ATF series of pseudomorphic HEMT transistors designed for RF applications. It represents a specific variant optimized for low-noise amplification within the 450 MHz to 6 GHz range. The part is distinct from standard JFETs due to its enhancement mode operation and GaAs material construction.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Broadcom replacement guides or engineering change notices for qualified alternatives.

FAQ

What type of gate biasing does the ATF-54143 require?

It requires positive gate voltage (Vgs) due to its enhancement mode technology, unlike conventional depletion mode devices that often need negative bias.

What is the maximum operating temperature for this device?

The maximum operating temperature is +150 °C.

Does the ATF-54143 support tape-and-reel packaging?

Yes, tape-and-reel packaging options are available for this component.