ATF-55143-TR1G

ATF-55143-TR1G

  • Description:RF MOSFET E-PHEMT 2.7V SOT343
  • Series:-

SKU:8b5cddf18550 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 2.7V SOT343
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:E-pHEMT
  • Frequency:2GHz
  • Gain:17.7dB
  • Voltage - Test:2.7 V
  • Current Rating (Amps):100mA
  • Noise Figure:0.6dB
  • Current - Test:10 mA
  • Power - Output:14.4dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:SOT-343
  • Configuration:-

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ATF-55143-TR1G

Overview

The ATF-55143-TR1G is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) manufactured by Broadcom Limited. It operates within the 450 MHz to 6 GHz frequency range and utilizes single supply technology. Key electrical parameters include a typical drain current of 10 mA at 2.7 V, an associated gain of 17.7 dB, and a noise figure of 0.6 dB. The device provides a third-order intercept point of 24.2 dBm and an output power at 1 dB gain compression of 14.4 dBm. It is housed in a compact 4-lead SC-70 (SOT-343) surface mount plastic package.

Feature Summary

  • High linearity performance with excellent uniformity in product specifications
  • Very low noise figure suitable for sensitive receiver front ends
  • Single supply enhancement mode technology simplifies biasing requirements

Applications

  • Low noise amplifier for cellular/PCS handsets
  • LNA for WLAN, WLL/RLL and MMDS applications
  • General purpose discrete E-PHEMT for ultra low noise applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance and lead-free packaging options as specified in official documentation. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Evaluate thermal management capabilities given the small SOT-343 package size. Consider impedance matching networks optimized for the target operating frequency between 450 MHz and 6 GHz. Assess system noise budget requirements against the 0.6 dB noise figure specification to ensure adequate signal-to-noise ratio.

Part Context

This component belongs to Broadcom's portfolio of RF transistors designed for wireless communication systems. It serves as a critical active element in radio frequency signal chains where minimal signal degradation is required. The device represents a specific implementation of GaAs-based semiconductor technology for high-frequency amplification tasks.

Replacement Considerations

Check for cross-reference availability from Avago Technologies archives. Verify pinout compatibility and electrical parameter overlaps before substituting with similar E-PHEMT devices from other manufacturers.

ATF-55143-TR1GATF-55143-TR1G

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