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The ATF-55143-TR1G is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) manufactured by Broadcom Limited. It operates within the 450 MHz to 6 GHz frequency range and utilizes single supply technology. Key electrical parameters include a typical drain current of 10 mA at 2.7 V, an associated gain of 17.7 dB, and a noise figure of 0.6 dB. The device provides a third-order intercept point of 24.2 dBm and an output power at 1 dB gain compression of 14.4 dBm. It is housed in a compact 4-lead SC-70 (SOT-343) surface mount plastic package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance and lead-free packaging options as specified in official documentation. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Evaluate thermal management capabilities given the small SOT-343 package size. Consider impedance matching networks optimized for the target operating frequency between 450 MHz and 6 GHz. Assess system noise budget requirements against the 0.6 dB noise figure specification to ensure adequate signal-to-noise ratio.
This component belongs to Broadcom's portfolio of RF transistors designed for wireless communication systems. It serves as a critical active element in radio frequency signal chains where minimal signal degradation is required. The device represents a specific implementation of GaAs-based semiconductor technology for high-frequency amplification tasks.
Check for cross-reference availability from Avago Technologies archives. Verify pinout compatibility and electrical parameter overlaps before substituting with similar E-PHEMT devices from other manufacturers.