ATF-551M4-TR2

ATF-551M4-TR2

  • Description:RF MOSFET PHEMT FET 2.7V MINIPAK
  • Series:-

SKU:ea606fdf0666 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 2.7V MINIPAK
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:17.5dB
  • Voltage - Test:2.7 V
  • Current Rating (Amps):100mA
  • Noise Figure:0.5dB
  • Current - Test:10 mA
  • Power - Output:14.6dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:0505 (1412 Metric)
  • Supplier Device Package:MiniPak 1412
  • Configuration:-

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ATF-551M4-TR2

Overview

The ATF-551M4-TR2 is a low noise enhancement mode pseudomorphic HEMT manufactured by Broadcom Limited. It utilizes Gallium Arsenide (GaAs) technology and is housed in a Mini PAK surface-mount package. The device operates at frequencies up to 2 GHz, providing a typical gain of 17.5 dB with a noise figure of 0.5 dB. Key electrical parameters include a drain-source breakdown voltage of 5 V, a continuous drain current of 120 mA, and a power dissipation rating of 360 mW. The component supports operation at maximum temperatures of +150 C.

Feature Summary

  • Enhancement mode pseudomorphic HEMT architecture for low noise performance
  • Miniature leadless Mini PAK package design for compact integration
  • Optimized for high gain and minimal signal degradation in RF applications

Applications

  • Low noise amplifier circuits operating up to 2 GHz
  • RF front-end modules requiring high linearity
  • Wireless communication systems utilizing GaAs technology

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official documentation before procurement. Check for obsolescence notices as availability may be restricted. Validate that the Mini PAK footprint matches the target PCB layout requirements.

Selection Notes

Select this component when a low noise figure near 0.5 dB is required at 2 GHz. Ensure the circuit design accommodates the 5 V drain-source breakdown limit. Consider the 360 mW power dissipation capability for thermal management. Verify compatibility with SMD/SMT assembly processes due to the Mini PAK form factor.

Part Context

This part belongs to the ATF series of low noise pseudomorphic HEMTs from Broadcom. It shares architectural similarities with the ATF-551M4 but differs in packaging and tape-and-reel configuration. The device serves as a specialized RF transistor for high-frequency signal amplification where noise performance is critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

ATF-551M4-TR2ATF-551M4-TR2

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