SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ATF-58143-TR1G is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) manufactured by Broadcom Limited. It is housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The device operates at 2 GHz with a typical drain voltage of 3V and current of 30 mA. Key electrical parameters include a noise figure of 0.5 dB, associated gain of 16.5 dB, output power at 1 dB compression of 19 dBm, and an output third-order intercept point of 30.5 dBm. It is designed for applications requiring high dynamic range and low noise performance across frequencies from 450 MHz to 6 GHz.
Verify component authenticity through authorized distributors or direct manufacturer channels due to the obsolete status of this part number. Ensure that the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm RoHS compliance details against the latest official documentation before integration into production schedules.
Select this component when designing circuits requiring a low-noise front-end stage with high linearity in a compact footprint. The E-PHEMT technology offers better specification uniformity compared to standard JFET alternatives. Consider the 3V operating requirement and thermal dissipation limits inherent to the small SOT-343 package during PCB layout and biasing design.
This component belongs to the ATF series of RF transistors originally developed by Agilent Technologies and later continued by Broadcom after the semiconductor division spin-off. The ATF-58143 specifically targets wireless infrastructure markets, providing a balance of noise performance and power handling suitable for base station receiver chains and intermediate frequency stages.
Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult official Broadcom replacement guides or evaluate equivalent E-PHEMT devices with matching pinouts and electrical specifications.