AUIRFB3806

Single FETs, MOSFETs Overview

The AUIRFB3806 is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a TO-220AB through-hole package and is designed for high-reliability applications requiring robust performance. The device features a drain-source breakdown voltage of 60 V and a maximum on-resistance of 15.8 mΩ at 10 V gate drive. It supports a continuous drain current of 43 A at 25°C case temperature, reducing to 31 A at 100°C. Key electrical characteristics include a typical total gate charge of 22.0 nC and a thermal resistance from junction to case of 2.12 °C/W, with a maximum power dissipation of 71 W.

Single FETs, MOSFETs Feature Summary

• Automotive Q101 certified for high reliability in demanding vehicle environments
• Enhanced ruggedness with improved gate, avalanche, and dynamic dv/dt capabilities
• Fully characterized capacitance and safe operating area (SOA) specifications
• Optimized body diode performance with enhanced dv/dt and di/dt recovery

Single FETs, MOSFETs Applications

• High-efficiency synchronous rectification in switching mode power supplies
• Uninterruptible power supply systems
• High-speed power switching circuits
• Hard-switched and high-frequency power conversion topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturing origin and lot traceability against your quality management system requirements before procurement. Confirm that the TO-220AB tube packaging aligns with your assembly line handling protocols. Ensure that the component's RoHS and REACH compliance documentation is obtained directly from the manufacturer or authorized distributor to meet regulatory standards for your final product deployment.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole mounting solution is required for automotive power switching applications. The TO-220AB package facilitates effective heat dissipation for currents up to 43 A. Consider the 15.8 mΩ on-resistance for conduction loss calculations and the 22.0 nC gate charge for driver selection. Ensure the design accommodates the 60 V breakdown voltage margin relative to the system's maximum operating voltage.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, specifically tailored for the automotive market under the AUIRFB series designation. It represents a specialized variant of the standard IRFS3806, distinguished by its automotive qualification and through-hole packaging. The component integrates advanced silicon process technology with robust packaging to meet the stringent durability and longevity expectations of modern automotive electronic control units.

Single FETs, MOSFETs Replacement Considerations

The IRFS3806TRLPBF serves as a functional equivalent but utilizes a D2PAK surface-mount package rather than the TO-220AB through-hole format. Verify mechanical footprint compatibility and thermal interface requirements when substituting. The SMD version lacks the specific automotive Q101 certification status explicitly documented for the AUIRFB3806.