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AUIRFP2907 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRFP2907 - 75V-100V N-CHANNEL. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AUIRFP2907
- Description：AUIRFP2907 - 75V-100V N-CHANNEL
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 125A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：620 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AC
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for AUIRFP2907
Single FETs, MOSFETs Overview
The AUIRFP2907 is an N-channel HEXFET power MOSFET from Infineon Technologies, designed for high-reliability applications. It features a maximum drain-source voltage of 75 V and a continuous drain current of 209 A at 25°C. The device utilizes advanced process technology to achieve a low on-resistance of 4.5 mΩ at 10 V gate drive. Packaged in a TO-247AC housing with three pins, it supports through-hole mounting and operates within a temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Integrated isolation capability for enhanced noise immunity in electrically noisy environments
- Advanced silicon processing technology enabling low conduction losses
- Robust avalanche rating supporting repeated energy dissipation events
Single FETs, MOSFETs Applications
- Automotive power management systems
- Motor control circuits
- DC-DC converter designs
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'Z' or absence thereof against official datasheets to confirm insulation characteristics. Ensure the ordering part number matches the required package variant and isolation specifications. Cross-reference the manufacturer's latest documentation to validate compliance with automotive standards before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when isolated gate drive signals are necessary to prevent ground loops or interference. The TO-247AC package provides robust thermal performance for high-current applications. Evaluate the gate charge requirements against available driver capabilities to ensure optimal switching speeds and efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs, known for high reliability and low on-resistance. The 'AU' prefix typically denotes an integrated isolation feature, distinguishing it from standard variants like the IRFP2907. It serves as a specialized solution for automotive and industrial sectors requiring galvanic isolation.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRFP2907PBF for non-isolated applications. Verify pinout compatibility and electrical ratings before swapping. For isolated requirements, check other Infineon AU-series parts with matching voltage and current specifications.
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