B10G3438N55DZ

Overview

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC utilizing GEN10 LDMOS technology. It integrates the carrier and peaking devices, input splitter, output combiner, and pre-match within a single PQFN package. Designed for wideband operation from 3400 MHz to 3800 MHz, it provides independent control of carrier and peaking bias. At 3600 MHz with a 20 MHz LTE signal (PAR 7.6 dB), typical performance includes an output power of 7.94 W, gain of 34 dB, and drain efficiency of 37%. The device features a 30 Ω integrated pre-match output impedance and 50 Ω source impedance.

Feature Summary

• Integrated input splitter and output combiner for simplified circuit design
• Asymmetrical architecture designed for very high efficiency in Doherty applications
• Independent gate-source voltage control for both carrier and peaking stages
• Integrated ESD protection compliant with CDM Class C2A and HBM Class 1C

Applications

• RF power MMIC for multi-carrier base stations
• Final stage amplifier for small cell infrastructure
• Massive MIMO system implementations
• Multi-standard support including GSM, W-CDMA, and LTE

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status page before finalizing procurement. Confirm that the requested packing description matches the required reel specifications for automated assembly processes. Ensure all handling precautions regarding electrostatic discharge are strictly followed during storage and installation to maintain component integrity.

Selection Notes

Select this component for designs requiring a compact, fully integrated solution for 3400 MHz to 3800 MHz bands. The integrated pre-match simplifies impedance matching networks by providing a defined 30 Ω output interface. Consider the thermal resistance characteristics when designing the PCB heat dissipation strategy to ensure junction temperature limits are not exceeded under continuous wave or high peak power conditions.

Part Context

This device belongs to Ampleon’s Macro line-up of multi-band high-power driver and final amplifiers. It is engineered using state-of-the-art GEN10 LDMOS technology to provide reliable RF power solutions. The integration of multiple functions into a single package supports volume-scale manufacturing and advanced design methodologies for mobile communication standards.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Designers should consult official Ampleon channels for potential alternative components or updated revisions.