B10G3741N55DZ

B10G3741N55DZ

$19.86
  • Description:RF MOSFET LDMOS 20QFN
  • Series:-

SKU:96fa4e95ef8d Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 20QFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:3.7GHz ~ 4.1GHz
  • Gain:34.8dB
  • Voltage - Test:-
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:47.6dBm
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:20-QFN Exposed Pad
  • Supplier Device Package:20-PQFN (8x8)
  • Configuration:-

Download product information

B10G3741N55DZ

Overview

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC utilizing GEN10 LDMOS technology. It integrates the carrier and peaking devices, input splitter, output combiner, and pre-match within a single PQFN package. Designed for wideband operation from 3700 MHz to 4100 MHz, it provides independent control of carrier and peaking bias. At 3900 MHz with 28 V drain voltage, typical performance includes 34.8 dB power gain, 37% drain efficiency under LTE conditions, and 47.6 dBm peak output power.

Feature Summary

  • Integrated asymmetrical Doherty architecture combining carrier and peaking stages
  • Built-in input splitter and output combiner for simplified circuit design
  • Independent bias control for carrier and peaking gate-source voltages
  • Integrated ESD protection mechanisms

Applications

  • RF power amplification for multi-carrier 5G base stations
  • Final stage implementation in massive MIMO systems
  • Multi-standard W-CDMA and LTE base station transmitters

Procurement Notes

Verify the specific ordering suffix Z against official Ampleon documentation to confirm packing details and RoHS compliance status. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the 12NC code with current product availability data before finalizing orders.

Selection Notes

Select this component for applications requiring high efficiency in wideband 3700 MHz to 4100 MHz coverage. The integrated Doherty topology reduces external passive component count compared to discrete solutions. Verify thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet for the intended power levels.

Part Context

This device belongs to Ampleon's portfolio of RF power MMICs designed for cellular infrastructure. It represents an evolution in integrated Doherty solutions, leveraging advanced LDMOS processes to achieve high linearity and efficiency. The part is specifically engineered to meet the stringent demands of modern small cell and macro base station deployments.

Replacement Considerations

No direct public substitute part numbers are documented in the source material. Designers must evaluate alternative Doherty MMICs based on frequency range, output power, and integration level. Any replacement requires re-validation of impedance matching networks and bias circuits.

B10G3741N55DZB10G3741N55DZ
$19.86
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