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The B11G1822N60DX is an LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the frequency range of 1.8 GHz to 2.2 GHz, delivering a power output of 48.5 dBm with a gain of 32 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and supports gate-source voltages from -500 mV to +13 V. It is housed in a 36-PQFN package measuring 12x7 mm, designed for surface mount installation. The component has a maximum operating temperature of +125 C and carries a moisture sensitivity rating.
Verify the specific suffix against official Ampleon documentation to confirm exact packaging and handling requirements. Confirm RoHS compliance status through current datasheets. Ensure ESD protection protocols are followed during storage and assembly due to moisture sensitivity classification. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when designing circuits requiring operation between 1.8 GHz and 2.2 GHz. Ensure thermal management solutions support the specified maximum junction temperature. Verify that the PCB layout accommodates the 36-PQFN footprint dimensions. Check compatibility with required bias voltages within the specified gate-source limits.
This part belongs to the B11G series of RF power transistors from Ampleon. The series is engineered for cellular base station applications. The B11G1822N60D variant shares similar electrical characteristics but may differ in packaging or testing specifications. The DX suffix typically denotes specific reel packaging configurations.
The B11G1822N60DYZ is a verified alternative offering identical electrical performance. It utilizes the same 36-PQFN package and maintains the same frequency and power specifications. Verify pinout compatibility before substitution.