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The B11G2327N70DX is a dual-path, two-stage fully integrated Doherty MMIC solution utilizing Ampleon's LDMOS technology. Designed for the 2.3 GHz to 2.7 GHz frequency band, this RF MOSFET delivers a gain of 30.3 dB. The component is housed in a 36-PQFN (12x7) surface-mount package and supports operation up to a maximum temperature of +200°C.
Verify current product status as sources indicate potential obsolescence or limited availability. Confirm datasheet revisions and specific ordering suffixes with the manufacturer. Ensure compliance with RoHS standards and moisture sensitivity levels during storage and handling procedures prior to assembly.
Select this component for applications requiring integrated Doherty solutions in the 2.3-2.7 GHz range. Consider the 30.3 dB gain specification and 36-PQFN form factor for PCB layout compatibility. Evaluate thermal management requirements given the high maximum operating temperature capability of the LDMOS structure.
This part belongs to the B11G2327 series of RF transistors from Ampleon. It shares architectural similarities with variants like the B11G2327N71D but differs in specific gain parameters and configuration details. The series represents Ampleon's integration of LDMOS technology into compact MMIC solutions for modern wireless infrastructure.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Ampleon resources for direct replacements or updated series alternatives.