B11G2327N70DYZ

Overview

The B11G2327N70DYZ is an RF LDMOS transistor manufactured by Ampleon USA Inc. It operates within the 2.3 GHz to 2.7 GHz frequency range, designed for high-power applications. Key electrical parameters include a drain-source breakdown voltage of 65 V and a gate-source voltage rating of -500 mV to +13 V. The device delivers a typical power gain of 33.5 dB and achieves a saturated output power of 49.5 dBm at the 3 dB compression point. It is housed in a 36-pin PQFN package (12x7 mm) with a maximum operating temperature of +200°C.

Feature Summary

• Integrated carrier and peak bias control architecture
• Optimized input impedance matching to standard 50 Ω systems
• Output impedance tailored to 20 Ω for simplified matching networks

Applications

• Macrocellular base station drivers
• Test and debugging equipment

Procurement Notes

Verify the exact model suffix against official Ampleon documentation, as the provided data references B11G2327N71DYZ. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks.

Selection Notes

Select this component for wideband RF power amplification requiring high linearity and efficiency. Verify that the 65 V breakdown voltage aligns with the system's supply requirements. Ensure thermal management solutions support the specified maximum junction temperature during continuous operation.

Part Context

This part belongs to the B11G series of RF LDMOS transistors from Ampleon. These devices are engineered for cellular infrastructure, offering integrated matching networks to reduce external component count. The specific model variant targets the 2.3-2.7 GHz band commonly used in modern wireless communication standards.

Replacement Considerations

Publicly confirmed substitute part numbers for B11G2327N70DYZ were not found in the available verified source material.